Name: SI1013R-T1-GE3
Brand: Vishay Siliconix
SKU: SI1013R-T1-GE3
Price: 0.47000 USD
Availability: InStock

new-10%

SI1013R-T1-GE3

Manufacturer part number:SI1013R-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V

Case Package:SOT-23

Datasheet:SI1013R-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75A
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.2Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	150mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	350mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	9ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	-400mA
Threshold Voltage	-450mV
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	-20V
Height	700μm
Length	1.58mm
Width	760μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SI1013R-T1-GE3

The SI1013R-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI1013R-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.