IXTQ52P10P Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2845pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 52A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTQ52P10P Features
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
a 100V drain to source voltage (Vdss)
IXTQ52P10P Applications
There are a lot of IXYS
IXTQ52P10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
