Name: NVB110N65S3F
Brand: ON Semiconductor
SKU: NVB110N65S3F
Price: 4.28000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	FRFET®, SuperFET® III
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	not_compliant
Power Dissipation-Max	240W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	110m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	2560pF @ 400V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

NVB110N65S3F Product Details

NVB110N65S3F Description

NVB110N65S3F is a 650v Single N-Channel Power MOSFET. SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced NVB110N65S3F is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.