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IXTA1N100

IXTA1N100

IXTA1N100

IXYS

MOSFET N-CH 1000V 1.5A TO-263

SOT-23

IXTA1N100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 11Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 54W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation54W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Rise Time19ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 200 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1890 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.845294$8.845294
10$8.344617$83.44617
100$7.872280$787.228
500$7.426680$3713.34
1000$7.006301$7006.301

About IXTA1N100

The IXTA1N100 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 1000V 1.5A TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA1N100, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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