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VS-GT200TP065N

VS-GT200TP065N

VS-GT200TP065N

Vishay Semiconductor Diodes Division

Trans IGBT Module N-CH 650V 221A 7-Pin INT-A-PAK

SOT-23

VS-GT200TP065N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Number of Pins 7
Operating Temperature-40°C~175°C TJ
Published 2016
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation600W
Configuration Half Bridge
Element ConfigurationSingle
Power - Max 600W
Input Standard
Collector Emitter Voltage (VCEO) 2.12V
Max Collector Current 221A
Current - Collector Cutoff (Max) 60μA
Collector Emitter Breakdown Voltage650V
Vce(on) (Max) @ Vge, Ic 2.12V @ 15V, 200A
IGBT Type Trench
NTC ThermistorNo
RoHS StatusROHS3 Compliant
In-Stock:3411 items

Pricing & Ordering

QuantityUnit PriceExt. Price
24$110.37708$2649.04992

About VS-GT200TP065N

The VS-GT200TP065N from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Module N-CH 650V 221A 7-Pin INT-A-PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GT200TP065N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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