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VS-GB100TP120N

VS-GB100TP120N

VS-GB100TP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 650W INT-A-PAK

SOT-23

VS-GB100TP120N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Operating Temperature150°C TJ
Published 2015
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation650W
Configuration Half Bridge
Power - Max 650W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 200A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance7.43nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:1595 items

Pricing & Ordering

QuantityUnit PriceExt. Price
24$101.53208$2436.76992

About VS-GB100TP120N

The VS-GB100TP120N from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 1200V 200A 650W INT-A-PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GB100TP120N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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