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VS-GT400TH120N

VS-GT400TH120N

VS-GT400TH120N

Vishay Semiconductor Diodes Division

Trans IGBT Module N-CH 1.2KV 600A

SOT-23

VS-GT400TH120N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 8)
Operating Temperature150°C TJ
Published 2015
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish NICKEL (197)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation2.119kW
Number of Elements 1
Configuration Half Bridge
Power - Max 2119W
Input Standard
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 600A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance28.8nF
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 400A
IGBT Type Trench
NTC ThermistorNo
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 28.8nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:3505 items

About VS-GT400TH120N

The VS-GT400TH120N from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Module N-CH 1.2KV 600A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-GT400TH120N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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