BSM300GA170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM300GA170DN2HOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Operating Temperature
150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
2.5kW
Configuration
Single
Element Configuration
Single
Power - Max
2500W
Input
Standard
Collector Emitter Voltage (VCEO)
3.9V
Max Collector Current
440A
Current - Collector Cutoff (Max)
3mA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
440A
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 300A
NTC Thermistor
No
RoHS Status
RoHS Compliant
In-Stock:4982 items
BSM300GA170DN2HOSA1 Product Details
BSM300GA170DN2HOSA1 Description
BSM300GA170DN2HOSA1 is a single IGBT with a break down voltage of 1700V from Infineon Technologies. BSM300GA170DN2HOSA1 operates between -55°C~175°C TJ, and its Current - Collector (Ic) (Max) is 440A. The BSM300GA170DN2HOSA1 has 3 pins and it is available in Module packaging way. BSM300GA170DN2HOSA1 has a 1700V Voltage - Collector Emitter Breakdown (Max) value.
BSM300GA170DN2HOSA1 Features
Single switch
Including fast free-wheeling diodes
Package with insulated metal base plate
RG on,min = 5.6 Ohm
BSM300GA170DN2HOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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