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TK35E08N1,S1X

TK35E08N1,S1X

TK35E08N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 55A TO-220

SOT-23

TK35E08N1,S1X Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Published 2013
Series U-MOSVIII-H
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 72W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.2m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 55A
RoHS StatusRoHS Compliant
In-Stock:8798 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.964956$6.964956
10$6.570712$65.70712
100$6.198786$619.8786
500$5.847911$2923.9555
1000$5.516897$5516.897

About TK35E08N1,S1X

The TK35E08N1,S1X from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 80V 55A TO-220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TK35E08N1,S1X, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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