STB11NK50ZT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB11NK50ZT4 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
520mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB11N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Turn On Delay Time
14.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1390pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
4.5A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
40A
Dual Supply Voltage
500V
Nominal Vgs
3.75 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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STB11NK50ZT4 Product Details
STB11NK50ZT4 Description
STB11NK50ZT4 is an N-channel Zener-protected SuperMESH? power MOSFET provided by STMicroelectronics based on the well-established PowerMESH? technology and strip-based PowerMESH? layout. It is able to minimize on-state resistance and gate charge while ensuring a very good dv/dt capability for the most demanding applications.
STB11NK50ZT4 Features
Extremely high dv/dt capability
100% avalanche tested
Low gate charge
Low on-state resistance
Available in the D2PAK package
STB11NK50ZT4 Applications
Switching applications
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