Name: IRLL024ZTRPBF
Brand: Infineon Technologies
SKU: IRLL024ZTRPBF
Price: 0.96000 USD
Availability: InStock

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IRLL024ZTRPBF

Manufacturer part number:IRLL024ZTRPBF

Manufacturer:Infineon Technologies

Description:IRLL024ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLL024ZTRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	60MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	8.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 5V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	40A
Height	1.4478mm
Length	6.6802mm
Width	3.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLL024ZTRPBF Product Details

IRLL024ZTRPBF Description

IRLL024ZTRPBF, manufactured by Infineon Technologies. It's category belong to Electronic Components ICs. To achieve exceptionally low on-resistance per silicon area, the IRLL024ZTRPBF HEXFET? Power MOSFET employs the most advanced processing techniques. A 150°C junction operating temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.