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IXTA26P20P

IXTA26P20P

IXTA26P20P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 170m Ω @ 13A, 10V ±20V 2740pF @ 25V 56nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IXTA26P20P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series PolarP™
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN (SN)
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time33ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Pulsed Drain Current-Max (IDM) 70A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1288 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.192059$8.192059
10$7.728357$77.28357
100$7.290903$729.0903
500$6.878210$3439.105
1000$6.488878$6488.878

IXTA26P20P Product Details

IXTA26P20P Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2740pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 26A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 46 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTA26P20P Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 70A.
a 200V drain to source voltage (Vdss)


IXTA26P20P Applications


There are a lot of IXYS
IXTA26P20P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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