CSD16321Q5C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD16321Q5C Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 4 weeks ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Base Part Number
CSD16321
Pin Count
8
Number of Elements
1
Power Dissipation-Max
3.1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.4m Ω @ 25A, 8V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3100pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C
31A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 4.5V
Rise Time
15ns
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
3V 8V
Vgs (Max)
+10V, -8V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
1.1V
Gate to Source Voltage (Vgs)
10V
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
25V
Nominal Vgs
1.1 V
Height
1.05mm
Length
5mm
Width
6mm
Thickness
1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:3450 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.713593
$0.713593
10
$0.673200
$6.732
100
$0.635095
$63.5095
500
$0.599146
$299.573
1000
$0.565232
$565.232
CSD16321Q5C Product Details
CSD16321Q5C Description
CSD16321Q5C is an N-channel Power MOSFET from the manuifacturer Texas Instrument with a voltage of 25V. The operating temperature of CSD16321Q5C is -55°C~150°C TJ and its maximum power dissipation are 3.1W Ta. CSD16321Q5C has 8 pins and it is available in Tape & Reel (TR) packaging way. The NexFET? power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
CSD16321Q5C Features
DualCool? Package SON 5×6mm
Optimized for Two-Sided Cooling
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
CSD16321Q5C Applications
Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
Optimized for Synchronous FET Applications
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