FDMS86200DC Description
ON Semiconductor's innovative PowerTrench? process, which includes Shielded Gate technology, is used to make this FDMS86200DC MOSFET. Low Junction-to-Ambient thermal resistance has been paired with advances in both silicon and Dual CoolTM package technologies to provide the lowest rDS(on) while maintaining good switching performance.
FDMS86200DC Features
? Technology for Shielded Gate MOSFETs
? DFN8 Package with Dual CoolTM Top Side Cooling
? VGS = 10 V, ID = 9.3 A, max rDS(on) = 17 m
? VGS = 6 V, ID = 7.8 A, max rDS(on) = 25 m
? Extremely Low rDS with High-Performance Technology (on)
? Completely UIL-tested
? Compliant with RoHS
FDMS86200DC Applications
? In DC DC Converters, the primary MOSFET is used.
? Synchronous Rectifier (Secondary)
? On/Off Switch
