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IXFP72N30X3M

IXFP72N30X3M

IXFP72N30X3M

IXYS

MOSFET (Metal Oxide) N-Channel Tube 19m Ω @ 36A, 10V ±20V 5.4nF @ 25V 82nC @ 10V 300V TO-220-3 Full Pack, Isolated Tab

SOT-23

IXFP72N30X3M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 36W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 19m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 5.4nF @ 25V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:881 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.83000$6.83
50$5.59660$279.83
100$5.05050$505.05
500$4.23150$2115.75

IXFP72N30X3M Product Details

IXFP72N30X3M Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.4nF @ 25V.The transistor must receive a 300V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFP72N30X3M Features


a 300V drain to source voltage (Vdss)


IXFP72N30X3M Applications


There are a lot of IXYS
IXFP72N30X3M applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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