Name: STB270N4F3
Brand: STMicroelectronics
SKU: STB270N4F3
Price: 4.84000 USD
Availability: InStock

new-10%

STB270N4F3

Manufacturer part number:STB270N4F3

Manufacturer:STMicroelectronics

Description:STB270N4F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB270N4F3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, STripFET™ III
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	2MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB270N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	180ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	640A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB270N4F3 Product Details

STB270N4F3 N-Channel MOSFET Description

This N-Channel enhancement mode MOSFETSTB270N4F3 is the most recent improvement of STMicroelectronics' distinctive "Single Feature SizeTM" strip-based process, with fewer key alignment stages and thus exceptional manufacturing reproducibility. The resulting transistor has a very high packing density for low on-resistance, tough avalanche properties, and a low gate charge.