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STT7P2UH7

STT7P2UH7

STT7P2UH7

STMicroelectronics

STT7P2UH7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STT7P2UH7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Weight 36.003894mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
Series STripFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 19.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STT7P
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Turn On Delay Time12.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22.5m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 16V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time30.5ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 84.5 ns
Turn-Off Delay Time 128 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 28A
RoHS StatusROHS3 Compliant
In-Stock:2857 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.548114$1.548114
10$1.460485$14.60485
100$1.377815$137.7815
500$1.299826$649.913
1000$1.226251$1226.251

STT7P2UH7 Product Details

STT7P2UH7 Description


STT7P2UH7 is a P-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 20V. This P-channel Power MOSFET utilizes the STripFET? H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.



STT7P2UH7 Features


  • Very low on-resistance

  • Very low capacitance and gate charge

  • High avalanche ruggedness



STT7P2UH7 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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