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BSP170PE6327T

BSP170PE6327T

BSP170PE6327T

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

SOT-23

BSP170PE6327T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Series SIPMOS®
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating-1.9A
Power Dissipation-Max 1.8W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time28ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.9A
Input Capacitance410pF
Rds On Max 300 mΩ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1448 items

About BSP170PE6327T

The BSP170PE6327T from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 60V 1.9A SOT223.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSP170PE6327T, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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