FQH90N15 Description
The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These devices are ideal for low voltage tasks like DC motor control, high efficiency switching for DC/DC converters, and audio amplifiers. They also provide a steady supply of power.
FQH90N15 Features
90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
Low gate charge (typical 220 NC)
Low Cross (typical 200 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
FQH90N15 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
