STP26NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP26NM60N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
165MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP26N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
165m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
20A
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
80A
Dual Supply Voltage
600V
Nominal Vgs
3 V
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:951 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.048520
$2.04852
10
$1.932566
$19.32566
100
$1.823176
$182.3176
500
$1.719977
$859.9885
1000
$1.622620
$1622.62
STP26NM60N Product Details
STP26NM60N Description
The STP26NM60N is an N-channel Power MOSFET that has been developed using MDmeshTM technology in its second generation. With this new generation of Power MOSFETs, a vertical structure is combined with a strip layout to produce one of the lowest on-resistances and gate charges in the world. This means that STP26NM60N is well suited to the most demanding converters with high efficiency.
STP26NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
STP26NM60N Applications
Switch-mode and resonant-mode
power supplies
Motor controls
DC choppers
Uninterruptible Power Supplies (UPS)
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