Name: FCH041N60F
Brand: ON Semiconductor
SKU: FCH041N60F
Price: 11.62000 USD
Availability: InStock

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FCH041N60F

Manufacturer part number:FCH041N60F

Manufacturer:ON Semiconductor

Description:FCH041N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCH041N60F Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	SuperFET® II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	595W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	595W
Turn On Delay Time	63 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	41m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14365pF @ 100V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	66ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	53 ns
Turn-Off Delay Time	244 ns
Continuous Drain Current (ID)	76A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	228A
Avalanche Energy Rating (Eas)	2025 mJ
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FCH041N60F Product Details

FCH041N60F Description

The FCH041N60F MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve exceptional low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the FCH041N60F MOSFET is ideal for switching power applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of the FCH041N60F MOSFET can eliminate a component and improve system reliability.