Name: SSM6G18NU,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6G18NU,LF
Price: 0.47000 USD
Availability: InStock

new-10%

SSM6G18NU,LF

Manufacturer part number:SSM6G18NU,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 112m Ω @ 1A, 4.5V ±8V 270pF @ 10V 4.6nC @ 4.5V 20V 6-WDFN Exposed Pad

Case Package:SOT-23

Datasheet:SSM6G18NU,LF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	1W Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	112m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
FET Feature	Schottky Diode (Isolated)
RoHS Status	RoHS Compliant

SSM6G18NU,LF Product Details

SSM6G18NU,LF Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 10V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.5V 4.5V).