Description
The IRFP3306PBF is an N-channel HEXFET? Power MOSFET with increased gate, avalanche, and dynamic dV/dt robustness. It can be used in SMPS, hard switched, and high-frequency circuits for high-efficiency synchronous rectification. N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of field-effect transistor that belongs to the field-effect transistors category (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).
Features
● Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
● Avalanche SOA and fully characterized capacitance
● Enhanced dV/dt and dI/dt capability of body diodes
● Lead-Free
● Have a higher mobility
Applications
● Synchronous Rectification with High Efficiency in SMPS
● Uninterruptible Power Supply
● Power Switching at High Speed
● Circuits with Hard Switches and High Frequencies
● Power Management
● Industrial
