STGWT60H65FB Description
STGWT60H65FB is a 650v Trench gate field-stop IGBT. The STGWT60H65FB is an IGBT device developed using an advanced proprietary trench gate and field-stop structure. The STGWT60H65FB is a part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT60H65FB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
VCE(sat) = 1.6 V (typ.) @ IC = 60 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
STGWT60H65FB Applications
Photovoltaic inverters
High-frequency converters
Communications equipment
Wireless infrastructure
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Portable electronics
