SGW20N60FKSA1 Description
The SGW20N60FKSA1 is a Fast IGBT in NPT-technology. With regard to Hard Switching Topologies and Soft Switching/Resonant Topologies, Infineon offers a broad IGBT portfolio. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
SGW20N60FKSA1 Features
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 μs
Designed for:
- Motor controls
- Inverter
SGW20N60FKSA1 Applications
