STGB10NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGB10NC60KDT4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
2.240009g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
65W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGB10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Case Connection
ISOLATED
Input Type
Standard
Turn On Delay Time
17 ns
Power - Max
65W
Transistor Application
POWER CONTROL
Rise Time
6ns
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
72 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
20A
Reverse Recovery Time
22 ns
Continuous Drain Current (ID)
10A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Max Breakdown Voltage
600V
Turn On Time
23 ns
Test Condition
390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 5A
Turn Off Time-Nom (toff)
242 ns
Gate Charge
19nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
17ns/72ns
Switching Energy
55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4793 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STGB10NC60KDT4 Product Details
STGB10NC60KDT4 Descritpion
STGB10NC60KDT4 belongs to the family of short-circuit rugged IGBTs that are designed based on advanced PowerMESH? technology. An excellent trade-off can be ensured between advanced switching performance and low on-state behavior. On the basis of these features, it is ideally suitable for resonant or soft-switching applications.
STGB10NC60KDT4 Features
Advanced switching performance Low on-state behavior Excellent trade-off Low on-state voltage drop Available in the D2PAK package
STGB10NC60KDT4 Applications
High-frequency motor controls Resonant or soft-switching applications Motor drives
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