FGH80N60FD2TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH80N60FD2TU Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
290W
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
290W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
61 ns
JEDEC-95 Code
TO-247AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Turn On Time
74 ns
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Turn Off Time-Nom (toff)
201 ns
IGBT Type
Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
21ns/126ns
Switching Energy
1mJ (on), 520μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Fall Time-Max (tf)
100ns
Height
20.82mm
Length
15.87mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
In-Stock:1667 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.84000
$4.84
10
$4.36500
$43.65
450
$3.42678
$1542.051
900
$3.09044
$2781.396
FGH80N60FD2TU Product Details
FGH80N60FD2TU Description
FGH80N60FD2TU, using novel field stop IGBT technology, ON Semiconductor's field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential.
FGH80N60FD2TU Features
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
High Input Impedance
Fast Switching
Pb?Free
ROHS3 Compliant
No SVHC
FGH80N60FD2TU Applications
Induction Heating, PFC
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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