STGWT30H60DFB Description
The 600v STGWT30H60DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT30H60DFB is a part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT30H60DFB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.55 V (Typ.) @ IC = 30 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode
STGWT30H60DFB Applications
Photovoltaic inverters
High-frequency converters
Automotive
Hybrid, electric & powertrain systems
Industrial
