SGP13N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGP13N60UFTU Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
6.5A
Base Part Number
SG*13N60
Element Configuration
Single
Power Dissipation
60W
Input Type
Standard
Power - Max
60W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
13A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
13A
Collector Emitter Saturation Voltage
2.1V
Test Condition
300V, 6.5A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 6.5A
Gate Charge
25nC
Current - Collector Pulsed (Icm)
52A
Td (on/off) @ 25°C
20ns/70ns
Switching Energy
85μJ (on), 95μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:30025 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.181034
$0.181034
10
$0.170787
$1.70787
100
$0.161120
$16.112
500
$0.152000
$76
1000
$0.143396
$143.396
SGP13N60UFTU Product Details
SGP13N60UFTU Description
Insulated Gate Bipolar Transistors (IGBTs) from Fairchild's UF series have minimal conduction and switching losses. The UF series is intended for uses where high speed switching is necessary, such as motor control and general inverters.
SGP13N60UFTU Features
Accelerated switching
Low saturation voltage: 2.1 V at 6.5 A for VCE(sat).
Large input resistance
SGP13N60UFTU Applications
Switching applications
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