HGT1S12N60A4DS Description
The HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. TheIGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where lowconduction losses are essential. This device has been optimized for high-frequency switch mode power s
HGT1S12N60A4DS Features
>100kHz Operation 390V, 12A
200kHz Operation 390V, 9A
600V Switching SOA Capability
Typical Fall Tim 70nsatTJ= 1259C
Low Conduction L oss
Temperature Compensating SABERTH Model
