STGP10H60DF Description
These devices STGP10H60DFare IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.
STGP10H60DF Features
? High speed switching
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Short-circuit rated
? Ultrafast soft recovery antiparallel diode
STGP10H60DF Applications
? Motor control
? UPS
? PFC
