STGWA8M120DF3 Description
These IGBTs were created employing cutting-edge, exclusive trench gate field-stop construction. These components are M series IGBTs, which offer the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operations.
STGWA8M120DF3 Features
10 μs of short-circuit withstand time
VCE(sat) = 1.85 V (typ.) @ IC = 8 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
STGWA8M120DF3 Applications
Industrial drives
UPS
Solar
Welding
