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IXGA30N120B3

IXGA30N120B3

IXGA30N120B3

IXYS

IXYS SEMICONDUCTOR IXGA30N120B3 IGBT Single Transistor, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 Pins

SOT-23

IXGA30N120B3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation300W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N120
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.96V
Turn On Time56 ns
Test Condition 960V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Turn Off Time-Nom (toff) 471 ns
IGBT Type PT
Gate Charge87nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/127ns
Switching Energy 3.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:1203 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.76000$6.76
10$6.03800$60.38
50$5.43380$271.69
100$4.95080$495.08
250$4.46776$1116.94
500$4.00890$2004.45

About IXGA30N120B3

The IXGA30N120B3 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IXYS SEMICONDUCTOR IXGA30N120B3 IGBT Single Transistor, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 Pins.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXGA30N120B3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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