STGB25N40LZAG Description
The most cutting-edge PowerMESHTM technology is used by this application-specific IGBT, which is designed to withstand the demanding conditions of automobile ignition systems. Over a broad operating temperature range, these devices exhibit extremely low on-state voltage and very high SCIS energy capability. Furthermore, no additional protective circuitry is needed thanks to an integrated gate resistor and an ESD-protected logic level gate input.
STGB25N40LZAG Features
AEC-Q101 qualified
SCIS energy of 320 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
STGB25N40LZAG Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
