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TIG052TS-TL-E

TIG052TS-TL-E

TIG052TS-TL-E

ON Semiconductor

TIG052TS-TL-E datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

TIG052TS-TL-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e6
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Insulated Gate BIP Transistors
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 5.5V
Collector Emitter Breakdown Voltage400V
Collector Emitter Saturation Voltage5.5V
Vce(on) (Max) @ Vge, Ic 5.5V @ 2.5V, 150A
Current - Collector Pulsed (Icm) 150A
Gate-Emitter Voltage-Max 6V
Gate-Emitter Thr Voltage-Max 1V
RoHS StatusRoHS Compliant
In-Stock:5653 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.893538$0.893538
10$0.842960$8.4296
100$0.795245$79.5245
500$0.750231$375.1155
1000$0.707765$707.765

TIG052TS-TL-E Product Details

TIG052TS-TL-E Description


TIG052TS-TL-E is a single IGBT with a break down voltage of 400V from Infineon Technologies. TIG052TS-TL-E operates between -55°C~150°C TJ, and its maximum collector current is 20A. The TIG052TS-TL-E has three pins and it is available in Tape & Reel (TR) packaging way. TIG052TS-TL-E has a 600V Voltage - Collector Emitter Breakdown (Max) value.



TIG052TS-TL-E Features


  • Vce(on) (Max) @ Vge, Ic: 5.5V @ 2.5V, 150A

  • Collector Emitter Breakdown Voltage: 400V

  • Gate-Emitter Voltage-Max: 6V

  • Current - Collector Pulsed (Icm): 150A

  • Gate-Emitter Thr Voltage-Max: 1V



TIG052TS-TL-E Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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