Name: IRGS4065PBF
Brand: Infineon Technologies
SKU: IRGS4065PBF
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Reach Compliance Code	compliant
Input Type	Standard
Power - Max	178W
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	70A
Test Condition	180V, 25A, 10 Ω
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 70A
IGBT Type	Trench
Gate Charge	62nC
Td (on/off) @ 25°C	30ns/170ns

IRGS4065PBF Product Details

IRGS4065PBF Description

This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. Operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.

IRGS4065PBF Features

Optimized for sustain and energy recovery circuits in PDP applications, advanced trench IGBT technology
For increased panel efficiency, use low VCE(on) and energy per pulse (EPULSETM).
High capacity for repeating peak current
Lead-free packaging