IRG4BC20FD Description
The IRG4BC20FDPBF is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It is optimized for medium operating frequencies (1 to 5kHz in hard switching, >20kHz in resonant mode). It features a generation 4 IGBT design that provides tighter parameter distribution and higher efficiency than generation 3. The IGBT IRG4BC20FDPBF is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes are optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
IRG4BC20FD Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-220AB package
Lead-Free
IRG4BC20FD Applications
HVAC
Lighting
Consumer Electronics
telephones
televisions
calculators
Power Management
