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NGB8204NT4

NGB8204NT4

NGB8204NT4

ON Semiconductor

NGB8204NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGB8204NT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 400V
Max Power Dissipation115W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating18A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NGB8204
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Rise Time-Max 7000ns
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation115W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 18A
Collector Emitter Breakdown Voltage430V
Turn On Time5200 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 4V, 15A
Turn Off Time-Nom (toff) 13000 ns
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 18V
Gate-Emitter Thr Voltage-Max 1.9V
Fall Time-Max (tf) 15000ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:3923 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.910667$0.910667
10$0.859120$8.5912
100$0.810491$81.0491
500$0.764614$382.307
1000$0.721334$721.334

NGB8204NT4 Product Details

NGB8204NT4 Description


For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.



NGB8204NT4 Features


? Protection for integrated ESD diodes


? Unclamped Inductive Switching (UIS) Energy Per Area Increases with New Design


? Interface Power Loads to Logic or Microprocessor Devices with Low Threshold Voltage


? Reduced Saturation Voltage


? Ability to Handle High Pulsed Current



NGB8204NT4 Applications


Drives


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