STGWA15M120DF3 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capabilities are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGWA15M120DF3 Features
10 μS of short-circuit withstand time
VCcE(sat)= 1.85V (Typ.)@lc=15A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery antiparallel diode
STGWA15M120DF3 Applications
Industrial drives
UPS
Solar
Welding
