Name: STGWA40S120DF3
Brand: STMicroelectronics
SKU: STGWA40S120DF3
Price: 8.35000 USD
Availability: InStock

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STGWA40S120DF3

Manufacturer part number:STGWA40S120DF3

Manufacturer:STMicroelectronics

Description:STGWA40S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWA40S120DF3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Power Dissipation	468W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGWA40
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	468W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.15V
Max Collector Current	80A
Reverse Recovery Time	355 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	50 ns
Test Condition	600V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 40A
Turn Off Time-Nom (toff)	158.46 ns
IGBT Type	Trench Field Stop
Gate Charge	129nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	35ns/148ns
Switching Energy	1.43mJ (on), 3.83mJ (off)
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

STGWA40S120DF3 Product Details

STGWA40S120DF3 Description

STGWA40S120DF3, part of the S series of 1200 V IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is specifically designed to achieve maximal efficiency in low-frequency industrial systems. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.