Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IGW30N60H3FKSA1

IGW30N60H3FKSA1

IGW30N60H3FKSA1

Infineon Technologies

IGW30N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW30N60H3FKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2014
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *GW30N60
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 187W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Turn On Time50 ns
Test Condition 400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 262 ns
IGBT Type Trench Field Stop
Gate Charge165nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 21ns/207ns
Switching Energy 1.38mJ
RoHS StatusROHS3 Compliant
In-Stock:2162 items

Pricing & Ordering

QuantityUnit PriceExt. Price
240$2.68613$644.6712

IGW30N60H3FKSA1 Product Details

IGW30N60H3FKSA1 Description


IGW30N60H3FKSA1 is a 600v High-speed IGBT in Trench and Fieldstop technology. The Infineon IGW30N60H3FKSA1 can be applied in uninterruptible power supplies, welding converters, and converters with high switching frequency. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW30N60H3FKSA1 is in the PG-TO247-3 package with 187W power dissipation.



IGW30N60H3FKSA1 Features


very low VcEsat

low EMI

Very soft, fast recovery anti-parallel diode

maximum junction temperature 175°C

qualified according to JEDEC for target applications

Pb-free lead plating; RoHS compliant



IGW30N60H3FKSA1 Applications


Uninterruptible power supplies

Welding converters

Converters with the high switching frequency


Get Subscriber

Enter Your Email Address, Get the Latest News