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IKY40N120CS6XKSA1

IKY40N120CS6XKSA1

IKY40N120CS6XKSA1

Infineon Technologies

IKY40N120CS6XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKY40N120CS6XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Operating Temperature-40°C~175°C TJ
PackagingTube
Series TrenchStop™
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Power - Max 500W
Reverse Recovery Time 255ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 80A
Test Condition 600V, 40A, 9 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge285nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 27ns/315ns
Switching Energy 1.45mJ (on), 1.55mJ (off)
RoHS StatusROHS3 Compliant
In-Stock:760 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.24000$11.24
10$10.23200$102.32
240$8.60846$2066.0304
720$7.59879$5471.1288

IKY40N120CS6XKSA1 Product Details

IKY40N120CS6XKSA1 Description

IKY40N120CS6XKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKY40N120CS6XKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKY40N120CS6XKSA1 has the common source configuration.

IKY40N120CS6XKSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IKY40N120CS6XKSA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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