STGW60V60F Description
This IGBT was created employing a cutting-edge, exclusive trench gate fieldstop structure. The device is a component of the V series of IGBTs, which stand for the best conduction and switching losses compromise for very high frequency converters. Additionally, safer paralleling operation is produced by the positive VCE(sat) temperature coefficient and extremely narrow parameter distribution.
STGW60V60F Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 60 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGW60V60F Applications
