IKB03N120H2ATMA1 Description
IKB03N120H2ATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKB03N120H2ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKB03N120H2ATMA1 has the common source configuration.
IKB03N120H2ATMA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IKB03N120H2ATMA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
