IHW30N110R3FKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IHW30N110R3FKSA1 Features
·Powerful monolithic body diode with low forward voltage designed for soft commutation only·Very tight parameter distribution
·High ruggednesstemperature stable behavior·Low VCEsnt
·Easy parallel switching capability due to positive temperature coefficient in VcEsat·Low EMI
·Qualified according to JEDEC for target applications·Pb-free lead plating;RoHScompliant
·Complete product spectrum and PSpice
IHW30N110R3FKSA1 Applications
·Inductive cooking
nverterized microwave ovens Resonant converters
·Soft switching applications
