IRG7PK35UD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7PK35UD1PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
167W
Reach Compliance Code
unknown
Element Configuration
Single
Input Type
Standard
Power - Max
167W
Collector Emitter Voltage (VCEO)
2.35V
Max Collector Current
40A
Collector Emitter Breakdown Voltage
1.4kV
Voltage - Collector Emitter Breakdown (Max)
1400V
Collector Emitter Saturation Voltage
2V
Test Condition
600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 20A
Gate Charge
98nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
-/150ns
Switching Energy
650μJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
In-Stock:3514 items
IRG7PK35UD1PBF Product Details
IRG7PK35UD1PBF Description
IR introduces the IRG7PK35UD1PbF, a rugged and reliable ultra-high-speed 1400V channel insulated gate bipolar transistor (IGBT) optimized for soft switching applications such as induction and microwave ovens.
IRG7PK35UD1PBF Features
Low VCE(ON), ultra-low VF, and turn-off soft-switching losses
High efficiency in a wide range of soft-switching applications and switching frequencies
Positive VCE (ON) temperature coefficient and tight distribution of parameters
Excellent current sharing in parallel operation
Lead-free, RoHS compliant
IRG7PK35UD1PBF Applications
Induction heating
Microwave ovens
Soft switching applications
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