NGTB30N120L2WG Description
NGTB30N120L2WG developed by ON Semiconductor is a type of IGBT with Field Stop II Trench construction. It is able to deliver low on state voltage and minimal switching loss for demanding switching applications. Based on its specific characteristics, the NGTB30N120L2WG IGBT is well suited for a wide range of applications, including motor drive inverters, industrial switching, welding, and more.
NGTB30N120L2WG Features
10 us short?circuit capability
Low on state voltage
Minimal switching loss
Field Stop II Trench construction
TJmax = 175°C
NGTB30N120L2WG Applications
Motor drive inverters
Industrial switching
Welding
