STGP19NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP19NC60SD Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
130W
Base Part Number
STGP19
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
17.5 ns
Power - Max
130W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
175 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
Reverse Recovery Time
31 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
23.5 ns
Test Condition
480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 12A
Turn Off Time-Nom (toff)
535 ns
Gate Charge
54.5nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
17.5ns/175ns
Switching Energy
135μJ (on), 815μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2648 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.703520
$6.70352
10
$6.324075
$63.24075
100
$5.966109
$596.6109
500
$5.628405
$2814.2025
1000
$5.309816
$5309.816
STGP19NC60SD Product Details
Description
The STGP19NC60SD is a 20 A, 600 V fast IGBT with an Ultrafast diode. This IGBT makes excellent use of the cutting-edge PowerMESHTM technology to balance switching performance and minimal on-state behavior. The insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware.
Features
Optimized performance for medium operating frequencies
IGBT co-packaged with Ultrafast freewheeling diode
Very low on-voltage drop (VCE(sat))
Minimum power losses at 5 kHz in hard switching
Superior on-state current density
Applications
Medium frequency motor drives
Chopper and inverters
Solar inverters
In AC and DC motor drives offering speed control
In UPS (Uninterruptible Power Supply) system
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