IRG7PH42U-EP Description
IRG7PH42U-EP is a 1200v insulated gate bipolar transistor. The transistor IRG7PH42U-EP provides high efficiency in a wide range of applications, and excellent current sharing in parallel operation. The Infineon IRG7PH42U-EP can be applied in UPS, welding, solar inverter, and induction heating applications due to the following features. It is suitable for a wide range of switching frequencies due to low Vce(ON) and low switching losses.
IRG7PH42U-EP Features
Low VCE (ON) trench IGBT technology
Low switching losses
Maximum junction temperature 175 °C
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Lead -Free
IRG7PH42U-EP Applications
U.P.S
Welding
Solar inverter
Induction heating
