NGTB50N60FWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Trench construction and provides superior performance in demanding switching applications, offering both low-on-state voltage and minimal switching loss.
NGTB50N60FWG Features
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
5 s Short?Circuit Capability
These are Pb?Free Devices
NGTB50N60FWG Applications
Solar Inverters
Uninterruptible Power Supplies (UPS)
Motor Drives
